2N2857UB

2N2857UB概述

Trans RF BJT NPN 15V 0.04A 3Pin UB

RF NPN 15V 40mA 200mW 表面贴装型 UB


得捷:
RF TRANS NPN 15V 0.04A UB


艾睿:
This 2N2857UB RF amplifier from Microsemi is designed to operate in high radio frequency input power situations and is perfect for a variety of applications. This product&s;s minimum DC current gain is 30@3mA@1 V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.


Verical:
Trans RF BJT NPN 15V 0.04A 200mW 4-Pin Case UB


2N2857UB数据文档
型号 品牌 下载
2N2857UB

Microsemi 美高森美

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2N2857

Central Semiconductor

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2N2857CSM

Semelab

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2N2896

Microsemi 美高森美

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2N2857

Semicoa Semiconductor

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2N2803

Raytheon 雷神

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