SBC847BWT1G

晶体管 - 双极 BJT - 单 NPN 45V 100mA 100MHz 150mW 表面贴装型 SC-88/SC70-6/SOT-363

- 双极 BJT - 单 NPN 45 V 100 mA 100MHz 150 mW 表面贴装型 SC-88/SC70-6/SOT-363

得捷:
TRANS NPN 45V 0.1A SC88/SC70-6

立创商城:
SBC847BWT1G

艾睿:
Design various electronic circuits with this versatile NPN SBC847BWT1G GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT NPN 45V 0.1A 3-Pin SC-70 T/R