STMICROELECTRONICS MJD112T4 单晶体管 双极, NPN, 100 V, 25 MHz, 20 W, 2 A, 1000 hFE
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 100V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 100V 集电极连续输出电流ICCollector CurrentIC| 2A 截止频率fTTranstion FrequencyfT| 25MHz 直流电流增益hFEDC Current GainhFE| 500~2000 管压降VCE(sat)Collector-Emitter Saturation Voltage| 2V~3V 耗散功率PcPower Dissipation| Description & Applications| Complementary power Darlington transistors Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode 描述与应用| Complementary power Darlington transistors HFE线性度好 ■高FT 频率 ■单片达林顿配置 综合反平行集电极 - 发射极二极管
型号 | 品牌 | 下载 |
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MJD112T4 | ST Microelectronics 意法半导体 | 下载 |
MJD112T4G | ON Semiconductor 安森美 | 下载 |
MJD117G | ON Semiconductor 安森美 | 下载 |
MJD117T4G | ON Semiconductor 安森美 | 下载 |
MJD122G | ON Semiconductor 安森美 | 下载 |
MJD122T4G | ON Semiconductor 安森美 | 下载 |
MJD127G | ON Semiconductor 安森美 | 下载 |
MJD127T4G | ON Semiconductor 安森美 | 下载 |
MJD112-1G | ON Semiconductor 安森美 | 下载 |
MJD117TF | Fairchild 飞兆/仙童 | 下载 |
MJD112-001 | ON Semiconductor 安森美 | 下载 |