3N163-E3

VISHAY  3N163-E3.  场效应管, MOSFET

The is a -40V P-channel Enhancement Mode MOSFET designed for analogue switch and pre-amplifier applications where high speed and low parasitic capacitances are required.

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Ultra low input leakage

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125V High gate breakdown voltage

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High off isolation without power

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Minimize handling ESD problems