DS1230Y-100+

MAXIM INTEGRATED PRODUCTS  DS1230Y-100+  NVSRAM, 256K, FULLY STATIC, 1230 新

静态 RAM，

欧时:
256KBIT NV SRAM PARALLEL 5V 100NS EDIP28

得捷:
IC NVSRAM 256KBIT PAR 28EDIP

贸泽:
NVRAM 256k Nonvolatile SRAM

e络盟:
The DS1230Y-100+ is a 256k Non-volatile SRAM is 262,144-bit, fully static, non-volatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular byte wide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

安富利:
NVRAM NVSRAM Parallel 256K-Bit 5V 28-Pin EDIP

Chip1Stop:
NVRAM NVSRAM Parallel 256Kbit 5V 28-Pin EDIP

Newark:
# MAXIM INTEGRATED PRODUCTS  DS1230Y-100+  NVSRAM, 256K, FULLY STATIC, 1230

Win Source:
IC NVSRAM 256KBIT 100NS 28EDIP