MCH3209-TL-E

MCPH NPN 30V 3A

- 双极 BJT - 单 NPN 30 V 3 A 450MHz 800 mW 表面贴装型 3-MCPH

立创商城:
NPN 30V 3A

得捷:
TRANS NPN 30V 3A 3MCPH

贸泽:
Bipolar Transistors - BJT BIP NPN 3A 30V

艾睿:
Look no further than ON Semiconductor&s;s NPN MCH3209-TL-E general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

Verical:
Trans GP BJT NPN 30V 3A 800mW 3-Pin MCPH T/R