硅功率晶体管 Silicon Power Transistors
16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
The and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
•Total Harmonic Distortion Characterized
•High DC Current Gain −hFE= 25 Min @ IC= 8 Adc
•Excellent Gain Linearity
•High SOA: 2.50 A, 80 V, 1 Second
•Epoxy Meets UL 94, V−0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B 8000 V
Machine Model, C 400 V
•Pb−Free Packages are Available