N沟道 100V 42A
MOSFET
欧时:
AEQC101 Qualified N-CHANNEL 100-V D-S
立创商城:
N沟道 100V 42A
艾睿:
Amplify electronic signals and switch between them with the help of Vishay&s;s SQJ488EP-T1_GE3 power MOSFET. Its maximum power dissipation is 83000 mW. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 100V 42A 8-Pin SO T/R
| 型号 | 品牌 | 下载 |
|---|---|---|
| SQJ488EP-T1_GE3 | VISHAY 威世 | 下载 |
| SQJ412EP-T1_GE3 | Vishay Semiconductor 威世 | 下载 |
| SQJ460EP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SQJ461EP-T1_GE3 | Vishay Semiconductor 威世 | 下载 |
| SQJ412EP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SQJ469EP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SQJ422EP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SQJ461EP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SQJ463EP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SQJ463EP-T1_GE3 | Vishay Semiconductor 威世 | 下载 |
| SQJ456EP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |