NSS60201LT1G

ON SEMICONDUCTOR  NSS60201LT1G  单晶体管 双极, NPN, 60 V, 100 MHz, 540 mW, 2 A, 100 hFE

The is a 4A NPN Bipolar Transistor designed for use in low voltage and high speed switching applications where affordable efficient energy control is important. It is a miniature surface-mount device featuring ultra-low saturation voltage VCEsat and high current gain capability.

.

ESD robust

.

High current gain

.

High cut-off frequency

.

Low profile package

.

Linear gain Beta

.

Improved circuit efficiency

.

Decreased battery charge time

.

Reduce component count

.

High frequency switching

.

Smaller portable product

.

No distortion

.

AECQ101 qualified and PPAP capable