FZT688BTA

FZT688BTA概述

FZT688B 系列 NPN 4 A 12 V 表面贴装 硅 中等功率 晶体管 - SOT-223

Use this versatile NPN GP BJT from Zetex to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

FZT688BTA数据文档
型号 品牌 下载
FZT688BTA

Diodes 美台

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FZT649TA

Zetex

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FZT651

Zetex

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FZT600

Vishay Semiconductor 威世

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FZT605

Vishay Semiconductor 威世

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FZT653

Vishay Semiconductor 威世

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FZT649

Fairchild 飞兆/仙童

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FZT658

Vishay Semiconductor 威世

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FZT688B

Vishay Semiconductor 威世

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FZT689B

Vishay Semiconductor 威世

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FZT696B

Zetex

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