400V N沟道MOSFET 400V N-CHANNEL MOSFET
These N-Channel enhancement mode power field effect transistors are produced using s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
Product Highlights
17.2A, 400V, R
DSon
= 0.27
W
@V
GS
= 10 V
Low gate charge typical 45 nC
Low Crss typical 30 pF
Fast switching
100% avalanche tested
Improved dv/dt capability
| 型号 | 品牌 | 下载 |
|---|---|---|
| FQA17N40 | Fairchild 飞兆/仙童 | 下载 |
| FQA13N50C_F109 | Fairchild 飞兆/仙童 | 下载 |
| FQA19N20 | Fairchild 飞兆/仙童 | 下载 |
| FQA13N50CF | Fairchild 飞兆/仙童 | 下载 |
| FQA170N06 | Fairchild 飞兆/仙童 | 下载 |
| FQA10N80C_F109 | Fairchild 飞兆/仙童 | 下载 |
| FQA11N90_F109 | Fairchild 飞兆/仙童 | 下载 |
| FQA19N60 | Fairchild 飞兆/仙童 | 下载 |
| FQA11N90C_F109 | Fairchild 飞兆/仙童 | 下载 |
| FQA13N80_F109 | Fairchild 飞兆/仙童 | 下载 |
| FQA140N10 | Fairchild 飞兆/仙童 | 下载 |