PMXB75UPE

PMXB75UPE概述

DFN-D P-CH 20V 2.9A

The is a P-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in high-side load switch and charging switch for portable devices, power management in battery driven portables, LED driver and DC-to-DC converter applications.

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Leadless ultra small and ultra thin SMD plastic package
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Exposed drain pad for excellent thermal conduction
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1.5kV ESD protection HBM
.
69mR Drain-source ON-state resistance RDS ON
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Very low gate-source threshold voltage of -0.68Vfor portable applications VGS th
.
-55 to 150°C Junction temperature range
PMXB75UPE数据文档
型号 品牌 下载
PMXB75UPE

NXP 恩智浦

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PMXB120EPE

NXP 恩智浦

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PMXB350UPE

NXP 恩智浦

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PMXB360ENEA

NXP 恩智浦

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PMXB40UNE

NXP 恩智浦

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PMXB43UNE

NXP 恩智浦

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PMXB56EN

NXP 恩智浦

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PMXB65ENE

NXP 恩智浦

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PMXB350UPEZ

NXP 恩智浦

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PMXB43UNEZ

NXP 恩智浦

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PMXB360ENEAZ

NXP 恩智浦

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