对比图
型号 IPD12N03LBG PA02 IPB13N03LB
描述 OptiMOS®2功率三极管 OptiMOS㈢2 Power-Transistor30A, 30V, 0.0127ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN AND LEAD FREE, WPAK(2), 8 PINOptiMOS®2功率三极管 OptiMOS㈢2 Power-Transistor
数据手册 ---
制造商 Infineon (英飞凌) Renesas Electronics (瑞萨电子) Infineon (英飞凌)
分类 晶体管MOS管
安装方式 Surface Mount - Surface Mount
封装 TO-252 - TO-263-3
额定电压(DC) 30.0 V - 30.0 V
额定电流 30.0 A - 30.0 A
极性 - - N-CH
耗散功率 - - 52W (Tc)
输入电容 1.30 nF - 1.35 nF
栅电荷 11.0 nC - 11.0 nC
漏源极电压(Vds) 30.0 V - 30 V
连续漏极电流(Ids) 30.0 A - 30.0 A
输入电容(Ciss) - - 1355pF @15V(Vds)
耗散功率(Max) - - 52W (Tc)
封装 TO-252 - TO-263-3
工作温度 - - -55℃ ~ 175℃ (TJ)
产品生命周期 Obsolete Obsolete Discontinued at Digi-Key
包装方式 - - Tape & Reel (TR)
RoHS标准 RoHS Compliant RoHS Compliant Non-Compliant
含铅标准 Lead Free - Contains Lead