对比图
型号 SPB80N10LG SPP80N10L SPB80N10L
描述 Power Field-Effect Transistor, 80A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, 3 PINSIPMOS功率三极管 SIPMOS Power-TransistorSIPMOS功率三极管 SIPMOS Power-Transistor
数据手册 ---
制造商 Infineon (英飞凌) Infineon (英飞凌) Infineon (英飞凌)
分类 MOS管MOS管MOS管
安装方式 Through Hole Through Hole Surface Mount
封装 TO-263 TO-220-3-1 TO-263-3-2
额定电压(DC) 100 V 100 V 100 V
额定电流 80.0 A 80.0 A 80.0 A
极性 - N-CH N-CH
耗散功率 - 250W (Tc) 250W (Tc)
输入电容 4.54 nF 4.54 nF 4.54 nF
栅电荷 240 nC 240 nC 240 nC
漏源极电压(Vds) 100 V 100 V 100 V
连续漏极电流(Ids) 80.0 A 80.0 A 80.0 A
输入电容(Ciss) 4540pF @25V(Vds) 4540pF @25V(Vds) 4540pF @25V(Vds)
耗散功率(Max) - 250W (Tc) 250W (Tc)
额定功率(Max) 250 W - -
封装 TO-263 TO-220-3-1 TO-263-3-2
工作温度 - -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ)
产品生命周期 Obsolete Obsolete Obsolete
包装方式 Cut Tape (CT) Tube Tape
RoHS标准 RoHS Compliant RoHS Compliant Non-Compliant
含铅标准 Lead Free Lead Free Contains Lead