PSMN009-100P和PSMN009-100P,127

对比图

型号 PSMN009-100P PSMN009-100P,127 BUK7510-100B

描述 N沟道的TrenchMOS SiliconMAX标准水平FET N-channel TrenchMOS SiliconMAX standard level FETTO-220AB N-CH 100V 75AMOS(场效应管)/BUK7510-100B 管装

数据手册 ---

制造商 NXP (恩智浦) NXP (恩智浦) NXP (恩智浦)

分类 MOS管MOS管MOS管

安装方式 Through Hole Through Hole Through Hole

引脚数 3 3 -

封装 TO-220 TO-220-3 TO-220-3

额定电压(DC) 100 V - 100 V

额定电流 75.0 A - 110 A

漏源极电阻 0.0075 Ω 7.5 Ω -

极性 N-Channel N-Channel -

耗散功率 230 W 230 W -

阈值电压 3 V 3 V -

输入电容 8.25 nF - -

栅电荷 156 nC - -

漏源极电压(Vds) 100 V 100 V 100 V

连续漏极电流(Ids) 75.0 A 75A -

输入电容(Ciss) 8250pF @25V(Vds) 8250pF @25V(Vds) 6773pF @25V(Vds)

额定功率(Max) 230 W 230 W 300 W

工作温度(Max) 175 ℃ 175 ℃ -

工作温度(Min) -55 ℃ -55 ℃ -

耗散功率(Max) - 230W (Tc) 300W (Tc)

封装 TO-220 TO-220-3 TO-220-3

工作温度 -55℃ ~ 175℃ -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ)

产品生命周期 Unknown Active Unknown

包装方式 Tube Tube Tube

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 Lead Free Lead Free Lead Free

REACH SVHC标准 No SVHC - -

REACH SVHC版本 2015/12/17 2015/12/17 -