S29GL512S10FHI013

S29GL512S10FHI013图片1
S29GL512S10FHI013图片2
S29GL512S10FHI013概述

NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 100ns 64Pin FBGA T/R

GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family

S29GL01GS  1 Gbit  128 Mbyte

S29GL512S  512 Mbit  64 Mbyte

S29GL256S  256 Mbit  32 Mbyte

S29GL128S  128 Mbit  16 Mbyte

CMOS 3.0 Volt Core with Versatile I/O

General Description

The ® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time asfast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting infaster effective

programming time than standard programming algorithms. Thismakes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Distinctive Characteristics

65 nm MirrorBit Eclipse Technology

Single supply VCC for read / program / erase 2.7V to 3.6V

Versatile I/O Feature

       – Wide I/O voltage range VIO: 1.65V to VCC

x16 data bus

Asynchronous 32-byte Page read

512-byte Programming Buffer

       – Programming in Page multiples, up to a maximum of 512 bytes

Single word and multiple program on same word options

Sector Erase

       – Uniform 128-kbyte sectors

Suspend and Resume commands for Program and Erase operations

Status Register, Data Polling, and Ready/Busy pin methods to determine device status

Advanced Sector Protection ASP

     – Volatile and non-volatile protection methods for each sector

Separate 1024-byte One Time Program OTP array with two lockable regions

Common Flash Interface CFI parameter table

Temperature Range

     – Industrial -40°C to +85°C

     – In-Cabin -40°C to +105°C

100,000 erase cycles for any sector typical

20-year data retention typical

Packaging Options

     – 56-pin TSOP

     – 64-ball LAA Fortified BGA, 13 mm x 11 mm

     – 64-ball LAE Fortified BGA, 9 mm x 9 mm

     – 56-ball VBU Fortified BGA, 9 mm x 7 mm

S29GL512S10FHI013中文资料参数规格
技术参数

供电电流 60 mA

存取时间Max 100 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

封装参数

引脚数 64

封装 FBGA

外形尺寸

封装 FBGA

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买S29GL512S10FHI013
型号: S29GL512S10FHI013
制造商: Spansion 飞索半导体
描述:NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 100ns 64Pin FBGA T/R
替代型号S29GL512S10FHI013
型号/品牌 代替类型 替代型号对比

S29GL512S10FHI013

Spansion 飞索半导体

当前型号

当前型号

S29GL512S10FHI020

赛普拉斯

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