SPZT651T1G

NPN硅平面外延型晶体管 NPN Silicon Planar Epitaxial Transistor

- 双极 BJT - 单 NPN 60 V 2 A 75MHz 800 mW 表面贴装型 SOT-223（TO-261）

得捷:
TRANS NPN 60V 2A SOT223

e络盟:
单晶体管 双极, NPN, 60 V, 75 MHz, 800 mW, 2 A, 40 hFE

艾睿:
Compared to other transistors, the NPN SPZT651T1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 800 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

安富利:
Trans GP BJT NPN 60V 2A 4-Pin SOT-223 T/R

Verical:
Trans GP BJT NPN 60V 2A 800mW Automotive 4-Pin3+Tab SOT-223 T/R

Win Source:
TRANS NPN 60V 2A SOT223-4