SI4943CDY-T1-GE3

VISHAY  SI4943CDY-T1-GE3  双路场效应管, MOSFET, 双P沟道, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V

The is a dual P-channel MOSFET housed in a surface-mount package. It is suitable for load switching game systems and 2-cell Li-ion battery switching applications.

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Halogen-free

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TrenchFET® power MOSFET

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100% Rg and UIS tested

贸泽:
MOSFET 20V 8.0A 3.1W 19.2mohm @ 10V

艾睿:
Trans MOSFET P-CH 20V 8A 8-Pin SOIC N T/R

安富利:
Trans MOSFET P-CH 20V 8A 8-Pin SOIC N T/R

富昌:
双 P沟道 20 V 0.0192 Ω 62 nC 表面贴装 Mosfet - SOIC-8

Verical:
Trans MOSFET P-CH 20V 8A 8-Pin SOIC N T/R

Newark:
# VISHAY  SI4943CDY-T1-GE3  Dual MOSFET, Dual P Channel, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V