STMICROELECTRONICS STU12N65M5 功率场效应管, MOSFET, N沟道, 8.5 A, 650 V, 0.39 ohm, 10 V, 4 V
N-Channel 650V 8.5A Tc 70W Tc Through Hole I-PAK
得捷:
MOSFET N-CH 650V 8.5A IPAK
e络盟:
STMICROELECTRONICS STU12N65M5 功率场效应管, MOSFET, N沟道, 8.5 A, 650 V, 0.39 ohm, 10 V, 4 V
艾睿:
This STU12N65M5 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 70000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes mdmesh v technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Chip1Stop:
Trans MOSFET N-CH 650V 8.5A 3-Pin3+Tab IPAK Tube
DeviceMart:
MOSFET N-CH 650V 8.5A IPAK
针脚数 3
漏源极电阻 0.39 Ω
极性 N-Channel
耗散功率 70 W
阈值电压 4 V
漏源极电压Vds 650 V
上升时间 17.6 ns
输入电容Ciss 900pF @100VVds
额定功率Max 70 W
下降时间 23.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
封装 TO-251-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STU12N65M5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STI12N65M5 意法半导体 | 完全替代 | STU12N65M5和STI12N65M5的区别 |
STU5N95K3 意法半导体 | 类似代替 | STU12N65M5和STU5N95K3的区别 |
STU8N65M5 意法半导体 | 类似代替 | STU12N65M5和STU8N65M5的区别 |