N沟道620 V, 0.95 I© (典型值) , 5.5 SuperMESH3功率MOSFET采用TO- 220FP , IPAKFP , IPAK , TO- 220 , IPAK包 N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages
N-Channel 620V 5.5A Tc 90W Tc Through Hole I-PAK
得捷:
MOSFET N-CH 620V 5.5A IPAK
贸泽:
MOSFET N-Ch, 620V-1.1ohms 5.5A
e络盟:
功率场效应管, MOSFET, N沟道, 620 V, 5.5 A, 0.95 ohm, TO-251, 通孔
艾睿:
Amplify electronic signals and switch between them with the help of STMicroelectronics&s; STU6N62K3 power MOSFET. Its maximum power dissipation is 90000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
富昌:
N-Channel 620 V 1.2 Ω 30 nC Through Hole SuperMESH3™ Power Mosfet - IPAK
Chip1Stop:
Trans MOSFET N-CH 620V 5.5A 3-Pin3+Tab IPAK Tube
Verical:
Trans MOSFET N-CH 620V 5.5A 3-Pin3+Tab IPAK Tube
力源芯城:
620V,0.95Ω,5.5A,N沟道功率MOSFET
DeviceMart:
MOSFET N-CH 620V 5.5A IPAK
针脚数 3
漏源极电阻 0.95 Ω
极性 N-Channel
耗散功率 90 W
阈值电压 3.75 V
漏源极电压Vds 620 V
上升时间 12.5 ns
输入电容Ciss 875pF @50VVds
额定功率Max 90 W
下降时间 19 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.6 mm
宽度 2.4 mm
高度 6.2 mm
封装 TO-251-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STU6N62K3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP6N62K3 意法半导体 | 功能相似 | STU6N62K3和STP6N62K3的区别 |
STI6N62K3 意法半导体 | 功能相似 | STU6N62K3和STI6N62K3的区别 |
STB6NK60Z 意法半导体 | 功能相似 | STU6N62K3和STB6NK60Z的区别 |