STMICROELECTRONICS STU3N62K3 功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 620V 2.7A IPAK
欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 N沟道 MOSFET 晶体管 STU3N62K3, 2.7 A, Vds=620 V, 3引脚
e络盟:
晶体管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
艾睿:
Use STMicroelectronics&s; STU3N62K3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 45000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes supermesh 3 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Chip1Stop:
Trans MOSFET N-CH 620V 2.7A 3-Pin3+Tab IPAK Tube
TME:
Transistor: N-MOSFET; unipolar; 620V; 1.7A; 45W; IPAK
Verical:
Trans MOSFET N-CH 620V 2.7A 3-Pin3+Tab IPAK Tube
Newark:
# STMICROELECTRONICS STU3N62K3 MOSFET Transistor, N Channel, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
力源芯城:
620V,2.2Ω,2.7A,N沟道功率MOSFET
Win Source:
N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
DeviceMart:
MOSFET N-CH 620V 2.7A IPAK
针脚数 3
漏源极电阻 2.2 Ω
极性 N-Channel
耗散功率 45 W
阈值电压 3.75 V
漏源极电压Vds 620 V
连续漏极电流Ids 2.7A
上升时间 6.8 ns
输入电容Ciss 385pF @25VVds
额定功率Max 45 W
下降时间 15.6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 45W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.6 mm
宽度 2.4 mm
高度 6.9 mm
封装 TO-251-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STU3N62K3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD3N62K3 意法半导体 | 完全替代 | STU3N62K3和STD3N62K3的区别 |
STB3N62K3 意法半导体 | 完全替代 | STU3N62K3和STB3N62K3的区别 |
STP3N62K3 意法半导体 | 完全替代 | STU3N62K3和STP3N62K3的区别 |