2N7002H6327XTSA2

INFINEON  2N7002H6327XTSA2  场效应管, MOSFET, N沟道, 60V, 0.3A, SOT-23-3

OptiMOS™ 小信号 MOSFET

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET 2N7002H6327XTSA2, 300 mA, Vds=60 V, 3引脚 SOT-23封装

得捷:
MOSFET N-CH 60V 300MA SOT23-3

艾睿:
Use Infineon Technologies&s; 2N7002H6327XTSA2 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23; OptiMOS™

Verical:
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R

Newark:
# INFINEON  2N7002H6327XTSA2  MOSFET, N CH, 60V, 0.3A, SOT-23-3

Win Source:
MOSFET N-CH 60V 0.3A SOT23