DPAK N-CH 100V 35A
The IPD25CN10N G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS on and FOM Figure of Merit. The OptiMOS™ MOSFET offers industry"s lowest RDS on within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
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- Excellent switching performance
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- Environmentally-friendly
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- Increased efficiency
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- Highest power density
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- Less paralleling required
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- Smallest board-space consumption
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- Easy to design
漏源极电阻 0.019 Ω
极性 N-Channel
耗散功率 71 W
阈值电压 3 V
漏源极电压Vds 100 V
连续漏极电流Ids 35A
上升时间 4 ns
输入电容Ciss 2070pF @50VVds
额定功率Max 71 W
下降时间 3 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 71W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, Synchronous rectification for AC-DC SMPS, Isolated DC-DC converters telecom and datacom systems, Audio, Uninterruptable power supplies UPS, Or-ing switches and circuit breakers in 48V systems, Motor Drive & Control, Class D audio amplifiers, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPD25CN10NGATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD25CN10NGBUMA1 英飞凌 | 类似代替 | IPD25CN10NGATMA1和IPD25CN10NGBUMA1的区别 |
IPD33CN10NGBUMA1 英飞凌 | 类似代替 | IPD25CN10NGATMA1和IPD33CN10NGBUMA1的区别 |
FDD3672 飞兆/仙童 | 功能相似 | IPD25CN10NGATMA1和FDD3672的区别 |