BSO220N03MD G

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BSO220N03MD G概述

INFINEON  BSO220N03MD G  双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V

Description:

With the new OptiMOS™ 30V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.

Available in halfbridge configuration power stage 5x6

Summary of Features:

.
Ultra low gate and output charge
.
Lowest on-state resistance in small footprint packages
.
Easy to design in

Benefits:

.
Increased battery lifetime
.
Improved EMI behavior making external snubber networks obsolete
.
Saving costs
.
Saving space
.
Reducing power losses
BSO220N03MD G中文资料参数规格
技术参数

针脚数 8

漏源极电阻 0.0183 Ω

极性 Dual N-Channel

耗散功率 1.4 W

阈值电压 2.1 V

漏源极电压Vds 30 V

上升时间 2.8 ns

输入电容Ciss 800pF @15VVds

额定功率Max 1.4 W

下降时间 3.4 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2000 mW

封装参数

安装方式 Surface Mount

引脚数 8

封装 PG-DSO-8

外形尺寸

长度 4.9 mm

宽度 3.9 mm

高度 1.75 mm

封装 PG-DSO-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Onboard charger, VRD/VRM, Mainboard

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

在线购买BSO220N03MD G
型号: BSO220N03MD G
描述:INFINEON  BSO220N03MD G  双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V

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