IXDI602SITR

低边 IGBT MOSFET 灌:2A 拉:2A

低端 栅极驱动器 IC 反相 8-SOIC-EP

欧时:
IC GATE DRVR LOW-SIDE 8SOIC

得捷:
IC GATE DRVR LOW-SIDE 8SOIC

立创商城:
低边 IGBT MOSFET 灌:2A 拉:2A

贸泽:
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET

艾睿:
Ideal for a make and break circuit this IXDI602SITR power driver manufactured by Ixys Corporation will allow you to implement a transistor rather than a relay! This device has a maximum propagation delay time of 60 ns. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C.

Verical:
Driver 2A 2-OUT Low Side Inv 8-Pin SOIC EP T/R