SRAM, 4 Mbit, 256K x 16位, 3.135V 至 3.63V, Mini BGA, 48 引脚, 10 ns
DESCRIPTION
The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technol ogy. This highly reliable process coupled with innovative circuit design techniques, yields high-performance andlow power consumption devices.
FEATURES
• High-speed access time:
— 10, 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mA typ. CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
电源电压DC 3.30 V, 3.60 V max
针脚数 48
位数 16
存取时间 10 ns
内存容量 500000 B
存取时间Max 10 ns
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 3.135V ~ 3.6V
电源电压Max 3.6 V
电源电压Min 3.135 V
安装方式 Surface Mount
引脚数 48
封装 BGA-48
封装 BGA-48
工作温度 -40℃ ~ 85℃
产品生命周期 Active
包装方式 Tray
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IS61LV25616AL-10BLI Integrated Silicon SolutionISSI | 当前型号 | 当前型号 |
IS61LV25616AL-10BI Integrated Silicon SolutionISSI | 类似代替 | IS61LV25616AL-10BLI和IS61LV25616AL-10BI的区别 |
IS61LV25616AL-10BLI-TR Integrated Silicon SolutionISSI | 类似代替 | IS61LV25616AL-10BLI和IS61LV25616AL-10BLI-TR的区别 |
CY7C1041CV33-10BAXA 赛普拉斯 | 功能相似 | IS61LV25616AL-10BLI和CY7C1041CV33-10BAXA的区别 |