软件选用
制备二极管
仿真代码
结果展示
制备三级管
仿真代码
结果展示
CMOS的制备
仿真代码
制备二极管
仿真代码
go athena line x loc = 0.00 spac = 0.1 line x loc = 2.0 spac = 0.1 line y loc = 0.0 spac = 0.005 line y loc = 0.50 spac = 0.0125 line y loc = 2.0 spac = 0.1 #衬底定义 init silicon c.phosphorus=1.0e14 orientation =100 two.d #积累氧化层 deposit oxide thick =0.2 divisions = 2 #刻蚀氧化层 etch oxide start x=0.5 y=-0.2 etch continue x=0.5 y=0 etch continue x=1.5 y=0 etch done x=1.5 y=0.0 etch silicon left pl.x=0.5 etch silicon right pl.x=1.5 #扩散 diffuse time = 60 temp = 1100 c.boron = 1.0e15 press = 1.0 #淀积金属 etch oxide all deposit alum thickness = 0.2 div =3 #刻蚀金属 etch alum left pl.x=0.5 etch alum right pl.x=1.5 #定义二极管电极 electrode name = anode x = 1.0 electorde name = cathode backside #保存装置结构 structure outf=diode_pro.str #输出装置结构 tonyplot diode_pro.str tonyplot quit结果展示
制备三级管
仿真代码
go athena #x方向网格设置 line x loc=0 spac=0.1 line x loc=4 spac=0.1 #y方向网格设置 line y loc=0.0 spac=0.005 line y loc=0.5 spac=0.0125 line y loc=2 spac=0.1 #沉底定义 init silicon c.phos=1.0e14 orientation=100 two.d #积累氧化层 deposit oxide thick=0.20 division=2 #刻蚀氧化层 etch oxide start x=1.5 y=-0.2 etch continue x=1.5 y=0 etch continue x=3.5 y=0 etch done x=3.5 y=-0.2 #扩散 diffuse time=60 temp=1100 c.boron=1.0e15 press=1.5 etch oxide all #积累氧化层 deposit oxide thick=0.5 division=2 #刻蚀氧化层 etch oxide start x=2.5 y=-0.2 etch continue x=2.5 y=0 etch continue x=3.5 y=0 etch done x=3.5 y=-0.2 #刻蚀金属形成射极 etch alum start x=3 y=-0.2 etch continue x=3 y=0 etch continue x=4 y=0 etch done x=4 y=-0.2 #刻蚀金属形成基极 etch alum start x=2 y=-0.2 etch continue x=2 y=0 etch continue x=2.5 y=0 etch done x=2.5 y=-0.2 #刻蚀金属形成集电极 etch alum start x=0.8 y=-0.2 etch continue x=0.8 y=0 etch continue x=1.5 y=0 etch done x=1.5 y=-0.2 etch alum left pl.x=0.2 #定义二极管积累 electrode name=e x=2.8 electrode name=b x=1.8 electrode name=c x=0.6 #保存装置结构 #structure outf=diode_pro.str #输出装置结构 #tonyplot diode_pro.str #结束 tonyplot结果展示
CMOS的制备
仿真代码
go athena line x loc=-7 spac=0.05 line x loc=0 spac=0.05 line x loc=7 spac=0.05 line y loc=0.0 spac=0.05 line y loc=1.5 spac=0.08 line y loc=2.5 spac=0.25 line y loc=4.0 spac=0.5 init silicon orientation=100 c.boron=1e14 space.mul=2 two.d #N阱生成 deposit oxide thickness=0.8 #光刻 etch oxide start x=-6.5 y=0 etch continue x=-6.5 y=-0.8 etch continue x=0 y=-0.8 etch done x=0 y=0 #磷注入，退火 implant phosphor dose=5e12 energy=80 pears diffus time=30 temp=1000 nitrogen press=1.00 etch oxide #场氧区形成 deposit oxide thickness=0.1 deposit nitride thickness=0.13 div=2 etch nitride left x=-5 etch oxide left x=-5 etch nitride start x=-1 y=-0.1 etch continue x=-1 y=-0.23 etch continue x=1 y=-0.23 etch done x=1 y=-0.1 etch oxide start x=-1 y=0 etch continue x=-1 y=-0.1 etch continue x=1 y=-0.1 etch done x=1 y=0 etch nitride right x=5 etch oxide right x=5 diffus time=30 temp=1000 dryo2 press=1.00 hcl=3 diffus time=35 temp=1100 weto2 press=1.00 hcl=3 diffus time=30 temp=1000 dry02 press=1.00 hcl=3 etch nitride etchoxide thickness=0.2 rate.polish oxide machine=cmp u.s max.hard=0.02 min.hard=0.01 isotropic=0.001 polish machine=cmp time=0.05 min #形成格栅氧化层 diffus time=10 temp=700 dryo2 press=1.00 hcl=3 diffus time=5 temp=950 weto2 press=1.00 hcl=3 diffus time=10 temp=700 dry02 press=1.00 hcl=3 #形成多晶硅 deposit poly thick=0.05 div=6 #刻蚀 etch poly left x=-3.5 etchpoly right x=3.5
etch poly start x=-2.5 y=-0.1
etch continue x=-2.5 y=-0.3
etch continue x=2.5 y=-0.3
etch done x=2.5 y=-0.1
structure outfile=cmos_pro10.str
tonyplot cmos_pro10.str
deposit name.resist=AZ1350J thick=0.5 div=10
etch name.resist=AZ1350J x=3.5 right
etch name.resist=AZ1350J start x=1.5 y=0
etch continue x=1.5 y=0
etch continue x=1.5 y=-0.8
etch continue x=2.5 y=-0.8
etch done x=2.5 y=0
tonyplot
quit最后图像可以根据任务要求在tonyplot中进行对应的调节