DIODES INC. ZXMN6A11G 晶体管, MOSFET, N沟道, 3.8 A, 60 V, 140 mohm, 10 V, 1 V
The is a 60V N-channel Enhancement Mode DMOSFET designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| 型号 | 品牌 | 下载 |
|---|---|---|
| ZXMN6A11G | Vishay Semiconductor 威世 | 下载 |
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