BSC22DN20NS3GATMA1

INFINEON  BSC22DN20NS3GATMA1  晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC22DN20NS3GATMA1, 7 A, Vds=200 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 200V 7A TDSON-8-5

立创商城:
N沟道 200V 7A

贸泽:
MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3

e络盟:
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The BSC22DN20NS3GATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 34000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 200V 7A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 200V; 7A; 34W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 200V 7A 8-Pin TDSON EP T/R

Newark:
MOSFET Transistor, N Channel, 7 A, 200 V, 0.194 ohm, 10 V, 3 V

罗切斯特:
Trans MOSFET N-CH 200V 7A 8-Pin TDSON EP