BSC050NE2LSATMA1

INFINEON  BSC050NE2LSATMA1  晶体管, MOSFET, N沟道, 58 A, 25 V, 0.0042 ohm, 10 V, 2 V

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET BSC050NE2LSATMA1, 58 A, Vds=25 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 25V 39A/58A TDSON

立创商城:
N沟道 25V 58A 39A

贸泽:
MOSFET N-Ch 25V 58A TDSON-8 OptiMOS

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSC050NE2LSATMA1 power MOSFET is for you. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

TME:
Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R