BSC010NE2LSIATMA1

INFINEON  BSC010NE2LSIATMA1  晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0009 ohm, 10 V, 2 V

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET BSC010NE2LSIATMA1, 100 A, Vds=25 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 25V 38A/100A TDSON

贸泽:
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS

艾睿:
As an alternative to traditional transistors, the BSC010NE2LSIATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology. This P channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET P-CH 25V 38A 8-Pin TDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8; OptiMOS™

Verical:
Trans MOSFET N-CH 25V 38A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC010NE2LSIATMA1  MOSFET Transistor, N Channel, 100 A, 25 V, 0.0009 ohm, 10 V, 2 V