BSC079N03LSCGATMA1

晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0066 ohm, 10 V, 2.2 V

BSC079N03LSC G, SP000527424

得捷:
MOSFET N-CH 30V 14A/50A TDSON

立创商城:
N沟道 30V 14A 50A

e络盟:
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0066 ohm, 10 V, 2.2 V

艾睿:
This BSC079N03LSCGATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP

Verical:
Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R

Win Source:
MOSFET N-CH 30V 14A 8TDSON