TSHG6200

TSHG6200概述

850 nm 视角 20° 120 mW/sr 通孔 5 mm 红外 LED - T-1 3/4

The is a 850nm Infrared Emitting Diode in GaAlAs double hetero DH technology with high radiant power and high speed, moulded in a clear. It is suitable for high pulse current operation and good spectral matching with CMOS cameras.

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High reliability
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High radiant power
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High radiant intensity
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Low forward voltage
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±10° Angle of half intensity
TSHG6200数据文档
型号 品牌 下载
TSHG6200

Vishay Semiconductor 威世

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TSHG6410

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TSHG5410

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TSHG5210

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TSHG8200

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TSHG6210

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TSHG6400

Vishay Semiconductor 威世

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TSHG5510

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TSHG8400

Vishay Semiconductor 威世

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