HUF75639P3

FAIRCHILD SEMICONDUCTOR  HUF75639P3..  晶体管, MOSFET, N沟道, 56 A, 100 V, 21 mohm, 10 V, 4 V

The is a N-channel Power MOSFETs manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery operated products.

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Peak current vs. pulse width curve

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UIS Rating curve

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Temperature compensated PSPICE®/SABER™ electrical, SPICE & SABER thermal impedance simulation models