IPD90N04S4L04ATMA1

晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0032 ohm, 10 V, 1.7 V

表面贴装型 N 通道 90A（Tc） 71W（Tc） PG-TO252-3-313

欧时:
Infineon IPD90N04S4L04ATMA1

得捷:
MOSFET N-CH 40V 90A TO252-3

立创商城:
N沟道 40V 90A

e络盟:
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0032 ohm, 10 V, 1.7 V

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPD90N04S4L04ATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 71000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

安富利:
Trans MOSFET N-CH 40V 90A 3-Pin2+Tab TO-252

Verical:
Trans MOSFET N-CH 40V 90A Automotive 3-Pin2+Tab DPAK T/R