N沟道600 V , 0.075 I© (典型值) ,十五FDmeshâ ?? ¢ II功率MOSFET (具有快速二极管)的TO- 247封装 N-channel 600 V, 0.075 Ω typ., 35 A FDmesh⢠II Power MOSFET with fast diode in a TO-247 package
Description
This device is an N-channel Power MOSFET realized using the second generation of MDmesh™ technology known as FDmesh™ II. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
■ The worldwide best RDSon■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities.
Application
■ Switching applications
– Automotive
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