VS-FB190SA10

VISHAY  VS-FB190SA10  单晶体管 双极, N沟道, 190 A, 100 V, 0.0054 ohm, 10 V, 3.3 V

The is a 100V N-channel Power MOSFET, high current density power MOSFET is paralleled into a compact, high power module providing the best combination of switching, ruggedized design and very low on-resistance. The isolated package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500W. The low thermal resistance and easy connection to the package contribute to its universal acceptance throughout the industry.

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Fully isolated package

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Fully avalanche rated

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Dynamic dV/dt rating

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Low drain to case capacitance

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Low internal inductance

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Easy to use and parallel