VISHAY SIHB33N60E-GE3 场效应管, MOSFET, N沟道, 600V, 33A, TO-263-3
The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
| 型号 | 品牌 | 下载 |
|---|---|---|
| SIHB33N60E-GE3 | Vishay Semiconductor 威世 | 下载 |
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| SIHB15N60E-GE3 | Vishay Semiconductor 威世 | 下载 |
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| SIHB28N60EF-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIHB22N65E-GE3 | Vishay Semiconductor 威世 | 下载 |