SIHB33N60E-GE3概述
VISHAY SIHB33N60E-GE3 场效应管, MOSFET, N沟道, 600V, 33A, TO-263-3
The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
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- Low figure-of-meritFOM RON x Qg
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- Low input capacitance CISS
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- Reduced switching and conduction losses
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- Ultra low gate charge
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- Avalanche energy rated
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- Halogen-free
SIHB33N60E-GE3中文资料参数规格
技术参数
针脚数 3
漏源极电阻 0.083 Ω
极性 N-Channel
耗散功率 278 W
阈值电压 2 V
漏源极电压Vds 600 V
输入电容Ciss 3508pF @100VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 278 W
封装参数
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
外形尺寸
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
其他
包装方式 Tube
制造应用 Industrial, Lighting, Alternative Energy, Motor Drive & Control, Portable Devices, Computers & Computer Peripherals, Communications & Networking, Power Management
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
海关信息
ECCN代码 EAR99
在线购买SIHB33N60E-GE3
型号： SIHB33N60E-GE3
描述：VISHAY SIHB33N60E-GE3 场效应管, MOSFET, N沟道, 600V, 33A, TO-263-3