ISSI IS61LV51216-10TLI SRAM Memory, 8Mbit, 3.135 3.6V, 10ns 44Pin TSOP
DESCRIPTION
The ISSIIS61/64LV51216 is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
FEATURES
• High-speed access time:
— 8, 10, and 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mAtyp. CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperatures available
• Lead-free available
| 型号 | 品牌 | 下载 |
|---|---|---|
| IS61LV51216-10TLI | Integrated Silicon SolutionISSI | 下载 |
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