SIR870ADP-T1-GE3

SIR870ADP-T1-GE3概述

VISHAY  SIR870ADP-T1-GE3  晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 1.5 V

The is a 100V N-channel TrenchFET® Power MOSFET. Suitable for use in primary side switching, telecom and DC/DC inverters applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.

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Halogen-free according to IEC 61249-2-21 definition
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100% Rg Tested
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100% UIS Tested
SIR870ADP-T1-GE3数据文档
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