IXBX25N250

IXBX25N250概述

Trans IGBT Chip N-CH 2500V 55A 300000mW 3Pin3+Tab PLUS 247

This powerful and secure IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 300000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


得捷:
IGBT 2500V 55A 300W PLUS247


艾睿:
This powerful and secure IXBX25N250 IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 300000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


Chip1Stop:
Trans IGBT Chip N-CH 2.5KV 55A 3-Pin3+Tab PLUS 247


Verical:
Trans IGBT Chip N-CH 2500V 55A 300000mW 3-Pin3+Tab PLUS 247


DeviceMart:
IGBT 2500V 55A 300W PLUS247


IXBX25N250数据文档
型号 品牌 下载
IXBX25N250

IXYS Semiconductor

下载
IXBX64N250

IXYS Semiconductor

下载
IXBX75N170

IXYS Semiconductor

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IXBX50N360HV

IXYS Semiconductor

下载
IXBX75N170A

IXYS Semiconductor

下载
IXBX55N300

IXYS Semiconductor

下载

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