IXDD609D2TR

IXDD609D2TR概述

低边 IGBT MOSFET 灌:9A 拉:9A

Drive a high voltage and high current line with a transistor a certain way with this power driver manufactured by Ixys Corporation. This device has a maximum propagation delay time of 60 ns. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V. This gate driver has an operating temperature range of -40 °C to 125 °C.

IXDD609D2TR数据文档
型号 品牌 下载
IXDD609D2TR

IXYS Semiconductor

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IXDD509D1T/R

IXYS Semiconductor

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IXDD504SIAT/R

IXYS Semiconductor

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IXDD504D2T/R

IXYS Semiconductor

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IXDD609PI

IXYS Semiconductor

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IXDD630YI

IXYS Semiconductor

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IXDD609SIA

IXYS Semiconductor

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IXDD604SIA

IXYS Semiconductor

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IXDD609CI

IXYS Semiconductor

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IXDD604PI

IXYS Semiconductor

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IXDD614PI

IXYS Semiconductor

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