IXFN27N80Q数据手册PDF_IXFN27N80Q中文资料-锐单商城

IXFN27N80Q概述

IXYS SEMICONDUCTOR IXFN27N80Q 功率场效应管, MOSFET, N沟道, 27 A, 800 V, 320 mohm, 10 V, 4.5 V

The is a Q-class HiPerFET™ N-channel enhancement-mode Single Die Power MOSFET features avalanche rated and fast intrinsic rectifier.

.: International standard package

.: miniBLOC with aluminium nitride isolation

.: UL94V-0 Flammability rating

.: Unclamped inductive switching UIS rated

.: Rugged polysilicon gate cell structure

.: Low package inductance

.: Easy to mount

.: Space savings

.: High power density

.: High dV/dt and low trr

IXFN27N80Q替代型号

IXFN27N80Q详细参数

IXFN27N80Q数据文档

型号	品牌	下载
IXFN27N80Q	IXYS Semiconductor	下载
IXFN100N10S2	IXYS Semiconductor	下载
IXFN100N10S3	IXYS Semiconductor	下载
IXFN48N55	IXYS Semiconductor	下载
IXFN150N15	IXYS Semiconductor	下载
IXFN48N50U3	IXYS Semiconductor	下载
IXFN48N50U2	IXYS Semiconductor	下载
IXFN150N10	IXYS Semiconductor	下载
IXFN44N50U3	IXYS Semiconductor	下载
IXFN44N50U2	IXYS Semiconductor	下载
IXFN200N07	IXYS Semiconductor	下载