BS170-D26Z

BS170-D26Z概述

BS170-D26Z 编带

The BS170_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using Fairchild"s proprietary, high cell density, DMOS technology. This device has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.

.
High density cell design for low RDS ON
.
Voltage controlled small signal switch
.
Rugged and reliable
.
High saturation current capability
.
60V Drain gate voltage VDGR
.
±20V Continuous gate source voltage VGSS
.
150°C/W Thermal resistance, junction to ambient
BS170-D26Z数据文档
型号 品牌 下载
BS170-D26Z

ON Semiconductor 安森美

下载
BS170

Fairchild 飞兆/仙童

下载
BS170_D26Z

Fairchild 飞兆/仙童

下载
BS170_D27Z

Fairchild 飞兆/仙童

下载
BS170_D75Z

Fairchild 飞兆/仙童

下载
BS170_D74Z

Fairchild 飞兆/仙童

下载
BS170RLRAG

ON Semiconductor 安森美

下载
BS170G

ON Semiconductor 安森美

下载
BS170_L34Z

Fairchild 飞兆/仙童

下载
BS170RLRM

ON Semiconductor 安森美

下载
BS170RLRA

ON Semiconductor 安森美

下载

锐单商城 - 一站式电子元器件采购平台