INTERNATIONAL RECTIFIER IRF8707PBF 场效应管, N 通道, MOSFET, 30V, 11A, SOIC 新
Description
The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are critical in synchronous buck operationincluding Rdson and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Benefits
Very Low Gate Charge
Very Low RDSon at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
20V VGS Max. Gate Rating
100% tested for Rg
Lead-Free
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