HB 系列 650 V 40 A 高速 沟槽栅场截止 IGBT - TO-3P
IGBT 分立,STMicroelectronics
得捷:
IGBT 650V 80A 283W TO3P-3L
立创商城:
STGWT40H65DFB
欧时:
STMicroelectronics STGWT40H65DFB N沟道 IGBT, 80 A, Vce=650 V, 3引脚 TO-3P封装
贸泽:
IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
艾睿:
This fast-switching STGWT40H65DFB IGBT transistor from STMicroelectronics will be perfect in your circuit. Its maximum power dissipation is 283000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology.
安富利:
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube
Chip1Stop:
Trans IGBT Chip N-CH 650V 80A 3-Pin3+Tab TO-3P Tube
Verical:
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin3+Tab TO-3P Tube
型号 | 品牌 | 下载 |
---|---|---|
STGWT40H65DFB | ST Microelectronics 意法半导体 | 下载 |
STGW20H60DF | ST Microelectronics 意法半导体 | 下载 |
STGW35HF60W | ST Microelectronics 意法半导体 | 下载 |
STGWT30H65FB | ST Microelectronics 意法半导体 | 下载 |
STGWT30H60DFB | ST Microelectronics 意法半导体 | 下载 |
STGW19NC60W | ST Microelectronics 意法半导体 | 下载 |
STGWT40H60DLFB | ST Microelectronics 意法半导体 | 下载 |
STGW30H60DFB | ST Microelectronics 意法半导体 | 下载 |
STGWT20H60DF | ST Microelectronics 意法半导体 | 下载 |
STGWT30V60F | ST Microelectronics 意法半导体 | 下载 |
STGWT40H65FB | ST Microelectronics 意法半导体 | 下载 |