STGWT30H65FB数据手册PDF_STGWT30H65FB中文资料-锐单商城

STGWT30H65FB概述

HB 系列 650 V 30 A 高速沟槽栅场截止 IGBT - TO-3P

IGBT 沟槽型场截止通孔 TO-3P

得捷:
IGBT 650V 30A 260W TO3PL

贸泽:
IGBT 晶体管 Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

艾睿:
Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin3+Tab TO-3P Tube

安富利:
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-3P Tube

富昌:
HB 系列 650 V 30 A 高速沟槽栅场截止 IGBT - TO-3P

Chip1Stop:
Trans IGBT Chip N-CH 650V 60A 3-Pin3+Tab TO-3P Tube

Verical:
Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin3+Tab TO-3P Tube

Win Source:
IGBT 650V 30A 260W TO3PL / IGBT Trench Field Stop 650 V 30 A 260 W Through Hole TO-3P

STGWT30H65FB数据文档