IXXH50N60C3D1

IXXH 系列 GenX3 600 V 100 A 法兰安装 IGBT - TO-247AD

Minimize the current at your gate with the IGBT transistor from Ixys Corporation. Its maximum power dissipation is 600000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

立创商城:
600W 600V 100A

得捷:
IGBT 600V 100A 600W TO247AD

艾睿:
Minimize the current at your gate with the IXXH50N60C3D1 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 600000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

Verical:
Trans IGBT Chip N-CH 600V 100A 600000mW Automotive 3-Pin3+Tab TO-247AD

DeviceMart:
IGBT 600V 100A 600W TO247AD

Win Source:
IGBT 600V 100A 600W TO247AD / IGBT PT 600 V 100 A 600 W Through Hole TO-247 IXXH