PXAC192908FVV1R0XTMA1

射频金属氧化物半导体场效应RF MOSFET晶体管

Summary of Features:

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Broadband internal input and output matching

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Asymmetric Doherty design

\- Main: P1dB = 110 W Typ

\- Peak: P1dB = 120 W Typ

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Typical Pulsed CW performance, 1990 MHz, 28 V, combined outputs

\- Output power at P1dB = 240 W

\- Efficiency = 54%

\- Gain = 14 dB

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Capapable of handling 10:1 VSWR @28 V, 240 W CW output power

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Integrated ESD protection

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Human Body Model, Class 2 per ANSI/ESDA/JEDEC JS-001

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Low thermal resistance

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Pb-free and RoHS-compliant

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Package : H-37276G-6/2, earless